Welcome to the official website of Shenzhen Yishan Memory Technology Co., Ltd
Service hotline 86-755-2391 2131
You are here:Home >> Product >> SK-HYNIX Hynix



Contact us

Contact: Mr. Li / Miss King


Fax: +86-755-82727420

QQ: 2058566930 


Zip code: 518000

Room 1220, New Asia Guoli building, No. 18, Zhonghang Road, Huahang community, Futian District, Shenzhen



Model: H5PS1G63KFR-S6C

Brand: SK-HYNIX 

Type: original                   quantity: 65076

Encapsulation: BGA        batchnumber: 19+

Price: inquire                  sample: can be out

Description: DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA

  • H5PS1G63KFR-S6C
    RoHS: Yes, yes
    RoHS version: 2011/6 / 5
    Description: DDR2 SDRAM 1GBIT 64mx16 1.8V 84 feet FBGA on DRAM chip
    Classification: memory chip RAM DRAM chip. "
    Vendor code9:162f cage
    Basic package type: ball grid array
    Encapsulation Name: BGA
    Supplier: FBGA package
    Thin spaced ball grid array
    Lead shape: Ball
    Pin number: 84
    Circuit board: 84
    Package length (mm): 12.5
    Package width (mm): 7.5
    Packing height (mm): 0.91
    Sitting position plane height (mm): 1.1
    Pin distance (mm): 0.8
    Packaging material: plastic
    Installation: surface installation

    SK-Hynix Hynix chip manufacturer originates from Korean brand English abbreviation "HY". Hynix, the original modern memory, was renamed Hynix in 2001. Hynix Semiconductor is the third largest DRAM manufacturer in the world and ninth of the semiconductor company.

    DDR2 SDRAM for short, DDR2 is the second generation double data rate synchronous dynamic random access memory (Double-Data-Rate Two Synchronous Dynamic Random Access Memory), and is a kind of computer memory specification. It belongs to the SDRAM family of memory products, provides a higher operating efficiency and lower voltage than the DDR SDRAM, and is the successor to the DDR SDRAM (double data rate synchronous dynamic random access memory), and is also a current popular memory product. It is developed by JEDEC (Joint Committee on electronic equipment Engineering).

    The editing of the structure and characteristics of DDR2

    DDR2 memory has 240 pins (excluding positioning slot), and notebook memory is 200 pins.

    The positioning slot of the DDR2 memory is located between the sixty-fourth and sixty-fifth pins (the opposite side is between the 184th and 185th pins).

    DDR2 memory is all packaged by FBGA (fine pitch ball grid array), which is characterized by memory particle chip pins under particles.

    DDR2 memory needs 1.8V working voltage and 0.9V pull up voltage (data line).

    DDR2 memory each clock can read and write data at a speed of 4 times external bus, and can run 4 times as much as the internal control bus.

    DDR2 memory mainly uses switching mode power supply circuit, and a few of them are supplied by voltage regulation mode.

    The definition editor of DDR2

    DDR2 (Double Data Rate 2) SDRAM is a new generation of new generation memory technology standard developed by JEDEC (electronic equipment Engineering Joint Committee). It is different from the previous generation of DDR memory technology standard, although it is the same as the basic way to transmit data at the same time with the rise / drop delay of the clock, but the DDR2 memory is embraced. It has two times the memory readability of the previous generation of DDR (that is, 4bit data read prefetching). In other words, DDR2 memory per clock can read / write data at a speed of 4 times the external bus, and it can run 4 times as much as the internal control bus.

    In addition, as the DDR2 standard stipulates that all DDR2 memory is used in the form of FBGA encapsulation, and different from the widely used TSOP/TSOP-II packaging form, FBGA package can provide better electrical performance and heat dissipation, which provides a solid foundation for the stable work of DDR2 memory and the development of the future frequency. Recalling the development of DDR, from the first generation to the personal computer‘s DDR200 through DDR266, DDR333 to today‘s dual channel DDR400 technology, the development of the first generation of DDR has also reached the limit of the technology. It has been difficult to improve the working speed of memory by conventional methods; with the development of the latest Intel processor technology, the front bus is The requirement of memory bandwidth is higher and higher, and DDR2 memory with higher and more stable operation frequency will be the trend of the times.

  • Please submit your basic information and we will reply you as soon as possible! 





Related products

CopyRight© 2017 Shenzhen Yishan Memory Technology Co., Ltd All Rights Reserved Web Design—Tiandixin