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SK-HYNIX Hynix

H27U1G8F2BTR-BC

Model: H27U1G8F2BTR-BC


Brand: SK-HYNIX


Type: original                 quantity: 55600


Encapsulation: TSOP48 batch number:new+ROHS


Price: inquire                  sample: can be out


Description: NAND Flash Serial 3.3V 1G-bit 128M x 8

  • H27U1G8F2BTR-BC
    RoHS: Yes
    EU RoHS version: 2011/6 / 5
    Description: NAND Flash serial 3.3V 1G bit 128M x 848 pin TSOP
    Classification: memory Flash memory chip. "
    ECCN:3a991. 1. a
    Vendor Code: 9162f cage
    Basic package type: lead frame SMT
    Package name: SOP
    Supplier: TSOP package
    Thin shape small shape package (I type)
    Lead shape: gull wing
    Pin number: 48
    Circuit board: 48
    Package length (mm): 12
    Package width (mm): 18.4
    Packing height (mm): 1.03 (maximum)
    Sitting position plane height (mm): 1.2 (Marx)
    Pin distance (mm): 0.5
    Packaging material: plastic
    Installation: surface installation
    MSL:2
    Maximum Reflow Temperature (Celsius): 255 to 260
    Reflow Solder Time (SEC): 10
    Lead completion (electroplating): tin bismuth

    SK-Hynix Hynix chip manufacturer originates from Korean brand English abbreviation "HY". Hynix, the original modern memory, was renamed Hynix in 2001. Hynix Semiconductor is the third largest DRAM manufacturer in the world and ninth of the semiconductor company.

    Nand-flash memory is a kind of flash memory, and its internal use of nonlinear macro cell mode provides a cheap and effective solution for the realization of solid state large capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, which is suitable for storage, so it has been used more and more widely in the industry, such as embedded products including digital camera, MP3 with a large number of listening memory cards, small compact U disk.

    NAND feature editing

    Capacity and cost

    The unit size of NAND flash is almost half of the NOR device, and because of the simpler production process, the NAND structure can provide higher capacity within a given mold size and reduce the price accordingly.

    NOR flash occupies a large part of the 1 to 16MB flash memory market, and NAND flash is used only in 8 to 128M B products. This also indicates that NOR is mainly used in the code storage medium, and NAND is suitable for data storage. NAND is the largest share in CompactFlash, Secure, and storage and storage cards.

    Physical composition

    The data of NAND Flash is stored in memory cell by way of bit. Generally speaking, only one bit can be stored in one cell. The cell is connected to bit line in 8 or 16 units, forming the so-called byte (x8) /word (x16), which is the bit width of NAND Device. These Line will make up Page again, (NAND Flash has a variety of structures, NAND Flash I use is K9F1208, and the following is for Samsung‘s K9F1208U0M) and each page 528Bytes (512byte (Main Area)). How many Block on a specific piece of flash are determined according to needs. The Samsung k9f1208U0M I used has 4096 block, so the total capacity is 4096* (32*528B) =66MB, but the 2MB is used to save the extra data such as the ECC check code, so it actually can be used as 64MB.

    Reliable durability

    When flash medium is used, one of the most important problems is reliability. For systems that need to extend MTBF, Flash is a very suitable storage solution. The reliability of NOR and NAND can be compared from three aspects of life (durability), bit exchange and bad block processing.

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