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SAMSUNG Samsung

K9F1G08U0E-SCB0

Model: K9F1G08U0E-SCB0

Brand: SAMSUNG  

Type: original quantity:41300

Encapsulation: TSOP48 batch: 18+

Price: Negotiable sample: available for sale

Description: SLC NAND Flash 3.3V 1G-bit 128M x 8 48-Pin TSOP-I

  • K9F1G08U0E-SCB0
    RoHS:YES
    RoHS Version:2002/95/EC
    Description: SLC NAND Flash 3.3V 1G-bit 128M x 8 48-Pin TSOP-I
    Taxonomy:Memory "Memory Flash Chips"
    ECCN:3A991.b.1.a
    Supplier Cage Code:1542F
    Package Family Name:SOP
    Supplier Package:TSOP-I
    Package Description:Thin Small Outline Package (Type I)
    Pin Count:48
    PCB:48
    Package Length (mm):12.4 (Max)
    Package Width (mm):18.4
    Package Height (mm):1
    Seated Plane Height (mm):1.2 (Max)
    Pin Pitch (mm):0.5
    Package Material:Plastic
    Mounting:Surface Mount
    MSL:2
    Maximum Reflow Temperature (°C):260
    Number of Reflow Cycle:3

    Samsung Group is the largest multinational enterprise group in South Korea, and it is also the top 500 of the listed companies. SamSung group includes a large number of international subordinates. The SamSung group includes Samsung Electronics, Samsung, Samsung, and Samsung Life Insurance. The business involves electronic, financial, mechanical, chemical and other fields. Leading storage series FLASH/DRAM/SDRAM/DDR/EMMC and ARM.

    Nand-flash memory is a kind of flash memory, and its internal use of nonlinear macro cell mode provides a cheap and effective solution for the realization of solid state large capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, which is suitable for storage, so it has been used more and more widely in the industry, such as embedded products including digital camera, MP3 with a large number of listening memory cards, small compact U disk.
    NAND feature editing
    Capacity and cost
    The unit size of NAND flash is almost half of the NOR device, and because of the simpler production process, the NAND structure can provide higher capacity within a given mold size and reduce the price accordingly.

    NOR flash occupies a large part of the 1 to 16MB flash memory market, and NAND flash is used only in 8 to 128M B products. This also indicates that NOR is mainly used in the code storage medium, and NAND is suitable for data storage. NAND is the largest share in CompactFlash, Secure, and storage and storage cards.

    Physical composition

    The data of NAND Flash is stored in memory cell by way of bit. Generally speaking, only one bit can be stored in one cell. The cell is connected to bit line in 8 or 16 units, forming the so-called byte (x8) /word (x16), which is the bit width of NAND Device. These Line will make up Page again, (NAND Flash has a variety of structures, NAND Flash I use is K9F1208, and the following is for Samsung‘s K9F1208U0M) and each page 528Bytes (512byte (Main Area)). How many Block on a specific piece of flash are determined according to needs. The Samsung k9f1208U0M I used has 4096 block, so the total capacity is 4096* (32*528B) =66MB, but the 2MB is used to save the extra data such as the ECC check code, so it actually can be used as 64MB.

    Reliable durability

    When flash medium is used, one of the most important problems is reliability. For systems that need to extend MTBF, Flash is a very suitable storage solution. The reliability of NOR and NAND can be compared from three aspects of life (durability), bit exchange and bad block processing.

    Life (durability)

    In NAND flash, the maximum erasure number per block is one million times, while the NOR erasure number is one hundred thousand times.

    The NAND memory has a 10 to 1 block erasing cycle advantage, and the typical NAND block size is 8 times smaller than that of the NOR device, and each NAND memory block has fewer deleting times in a given time.

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