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Model: MT47H64M16HR-3IT:H

Brand: MICRON 

Type: original          quantity:56470

Package: BGA        batch number: 18+ROHS

Price: enquiry         sample: support         specification: contact customer service.

Description: DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA

  • MT47H64M16HR-3IT:H
    RoHS: Version2011/65/EU
    描述:DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA
    Taxonomy:Memory » Memory Chips » DRAM Chip
    Supplier Cage Code:6Y440
    Basic Package Type:Ball Grid Array
    Package Family Name:BGA
    Supplier Package:FBGA
    Package Description:Fine Pitch Ball Grid Array
    Lead Shape:Ball
    Pin Count:84
    Package Length (mm):12.5
    Package Width (mm):8
    Package Height (mm):0.8
    Seated Plane Height (mm):1.2(Max)
    Pin Pitch (mm):0.8
    Package Material:Plastic
    Mounting:Surface Mount
    Maximum Reflow Temperature (°C):260
    Reflow Solder Time (Sec):30
    Number of Reflow Cycle:3
    Lead Finish(Plating):SnAgCu

    MICRON is one of the world‘s leading suppliers of magnesium optic semiconductor solutions. Through globalized operations, magnesium manufactures and releases DRAM, NAND flash, CMOS image sensors, other semiconductor components and memory modules to the market for frontier computing, consumer goods, networks and mobile portable products.

    DDR2 SDRAM for short, DDR2 is the second generation double data rate synchronous dynamic random access memory (Double-Data-Rate Two Synchronous Dynamic Random Access Memory), and is a kind of computer memory specification. It belongs to the SDRAM family of memory products, provides a higher operating efficiency and lower voltage than the DDR SDRAM, and is the successor to the DDR SDRAM (double data rate synchronous dynamic random access memory), and is also a current popular memory product. It is developed by JEDEC (Joint Committee on electronic equipment Engineering).
    The editing of the structure and characteristics of DDR2
    DDR2 memory has 240 pins (excluding positioning slot), and notebook memory is 200 pins.
    The positioning slot of the DDR2 memory is located between the sixty-fourth and sixty-fifth pins (the opposite side is between the 184th and 185th pins).
    DDR2 memory is all packaged by FBGA (fine pitch ball grid array), which is characterized by memory particle chip pins under particles.
    DDR2 memory needs 1.8V working voltage and 0.9V pull up voltage (data line).
    DDR2 memory each clock can read and write data at a speed of 4 times external bus, and can run 4 times as much as the internal control bus.
    DDR2 memory mainly uses switching mode power supply circuit, and a few of them are supplied by voltage regulation mode.
    The definition editor of DDR2
    DDR2 (Double Data Rate 2) SDRAM is a new generation of new generation memory technology standard developed by JEDEC (electronic equipment Engineering Joint Committee). It is different from the previous generation of DDR memory technology standard, although it is the same as the basic way to transmit data at the same time with the rise / drop delay of the clock, but the DDR2 memory is embraced. It has two times the memory readability of the previous generation of DDR (that is, 4bit data read prefetching). In other words, DDR2 memory per clock can read / write data at a speed of 4 times the external bus, and it can run 4 times as much as the internal control bus.
    In addition, as the DDR2 standard stipulates that all DDR2 memory is used in the form of FBGA encapsulation, and different from the widely used TSOP/TSOP-II packaging form, FBGA package can provide better electrical performance and heat dissipation, which provides a solid foundation for the stable work of DDR2 memory and the development of the future frequency. Recalling the development of DDR, from the first generation to the personal computer‘s DDR200 through DDR266, DDR333 to today‘s dual channel DDR400 technology, the development of the first generation of DDR has also reached the limit of the technology. It has been difficult to improve the working speed of memory by conventional methods; with the development of the latest Intel processor technology, the front bus is The requirement of memory bandwidth is higher and higher, and DDR2 memory with higher and more stable operation frequency will be the trend of the times.
    New technology used by DDR2
    In addition to the above differences, DDR2 has introduced three new technologies: OCD, ODT and Post CAS.
    OCD (Off-Chip Driver): also known as off-line drive adjustment, DDR II can improve signal integrity through OCD. DDR II adjusts the voltage between them by adjusting the resistance value of pull-up / pull-down. Using OCD to improve signal integrity by reducing DQ-DQS‘s tilt, the signal quality is improved by controlling voltage.
    ODT:ODT is the end of the inner core resistor. We know that the main board using DDR SDRAM requires a large number of termination resistors to prevent data terminal reflection. It greatly increases the manufacturing cost of the motherboard. In fact, the requirements of different memory modules for the end circuit are different. The size of the end resistance determines the signal ratio and reflectivity of the data line, the small end resistance is low, but the signal to noise ratio is low; the signal to noise ratio of the data line is high, but the signal reflection will also increase. Therefore, the termination resistors on the motherboard can not match the memory module very well, but also affect the signal quality to a certain extent. DDR2 can build appropriate termination resistors according to its own characteristics, so that the best signal waveform can be guaranteed. Using DDR2 can not only reduce the cost of motherboard, but also get the best signal quality, which is unmatched by DDR.
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