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MICRON Micron

MT29F2G08ABAEAWP:E

Model: MT29F2G08ABAEAWP:E

Brand: MICRON  

Type: original            quantity: 52600

Package: TSOP48     batch number: 19+ROHS

Price: enquiry            sample: support           specification: contact customer service.

Description: SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I Tray

  • MT29F2G08ABAEAWP:E
    PCN Assembly/Origin: Fab Site Transistion 19/Nov/2013
    Standard packing: 1000
    Category: integrated circuit (IC)
    Family: memory
    Series: -
    Packing: bulk
    Format memory: flash memory
    Memory type: flash - NAND
    Storage capacity: 2G (256M x 8)
    Speed: -
    Interface: parallel
    Voltage power: 2.7 V ~ 3.6 V
    Working temperature: 0 C ~ 70 degree C
    Package / shell: 48-TFSOP (0.724 ", 18.40mm wide)
    Vendor device package: 48-TSOP I

    MICRON is one of the leading suppliers of advanced semiconductor solutions. Through globalized operations, magnesium manufactures and releases DRAM, NAND flash, CMOS image sensors, other semiconductor components and memory modules to the market for frontier computing, consumer goods, networks and mobile portable products.
    Nand-flash memory is a kind of flash memory, and its internal use of nonlinear macro cell mode provides a cheap and effective solution for the realization of solid state large capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, which is suitable for storage, so it has been used more and more widely in the industry, such as embedded products including digital camera, MP3 with a large number of listening memory cards, small compact U disk.
    NAND feature editing
    Capacity and cost
    The unit size of NAND flash is almost half of the NOR device, and because of the simpler production process, the NAND structure can provide higher capacity within a given mold size and reduce the price accordingly.
    NOR flash occupies a large part of the 1 to 16MB flash memory market, and NAND flash is used only in 8 to 128M B products. This also indicates that NOR is mainly used in the code storage medium, and NAND is suitable for data storage. NAND is the largest share in CompactFlash, Secure, and storage and storage cards.
    Physical composition
    The data of NAND Flash is stored in memory cell by way of bit. Generally speaking, only one bit can be stored in one cell. The cell is connected to bit line in 8 or 16 units, forming the so-called byte (x8) /word (x16), which is the bit width of NAND Device. These Line will make up Page again, (NAND Flash has a variety of structures, NAND Flash I use is K9F1208, and the following is for Samsung‘s K9F1208U0M) and each page 528Bytes (512byte (Main Area)). How many Block on a specific piece of flash are determined according to needs. The Samsung k9f1208U0M I used has 4096 block, so the total capacity is 4096* (32*528B) =66MB, but the 2MB is used to save the extra data such as the ECC check code, so it actually can be used as 64MB.
    Reliable durability
    When flash medium is used, one of the most important problems is reliability. For systems that need to extend MTBF, Flash is a very suitable storage solution. The reliability of NOR and NAND can be compared from three aspects of life (durability), bit exchange and bad block processing.
    Life (durability)
    In NAND flash, the maximum erasure number per block is one million times, while the NOR erasure number is one hundred thousand times.
    The NAND memory has a 10 to 1 block erasing cycle advantage, and the typical NAND block size is 8 times smaller than that of the NOR device, and each NAND memory block has fewer deleting times in a given time.
    Bit exchange
    All flash devices are perplexed by the phenomenon of bit switching. In some cases (very rare, NAND occurs more frequently than NOR), a bit will be reversed or reported to be reversed.
    A change may not be obvious, but if it happens on a key file, this small fault may cause the system to shut down. If only the report is problematic, it will be possible to read it several times.
    Of course, if this position really changes, we must adopt the error detection / error correction (EDC/ECC) algorithm. The problem of bit reversal is more common in NAND flash memory. NAND vendors use EDC/ECC algorithm when using NAND flash.
    This problem is not fatal to storing multimedia information with NAND. Of course, if you use local storage devices to store the operating system, configuration files or other sensitive information, you must use the EDC/ECC system to ensure reliability.
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