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Improve global supply, Samsung pingze P2 new factory speed up production DRAM

Time:2020-05-15 Views:397
Samsung is speeding up the transition of advanced technology. The P2 plant in pyonggyeonggi do, South Korea is installing equipment, and the EUV production line is also being built to produce advanced DRAM.
According to industry news, Samsung has signed an equipment contract with equipment manufacturers, and is installing semiconductor equipment in pingze new plant, which will be used for batch production of the second generation (1ynm) and the third generation (1znm) 10 nm DRAM, with an estimated initial monthly production capacity of about 30000 12 inch wafers.
Samsung‘s capital expenditure in the first quarter of 2020 Seven point three Megawon (about US $6 billion), of which semiconductor expenditure is Six Trillion won (about US $4.9 billion), nearly double year-on-year growth. Samsung also pointed out in the financial report that it will focus on the growing demand for server DRAM, enhance cost competitiveness by expanding 1ynm technology migration, and promote the technical development of 1znm DRAM. However, with the physical limit of the circuit getting closer and closer, improving the signal processing speed, reducing the working voltage and standby voltage, and increasing the DRAM output of new technology have become the driving force for Samsung to promote the mass production of EUV process.
Samsung is the first company to adopt EUV in DRAM production. EUV can effectively improve performance, production and shorten development time to overcome the challenges in DRAM technology extension. In March 2020, Samsung has successfully shipped 1 million industry‘s first 10 nm (D1X) DDR4 modules based on EUV technology, and has completed the evaluation of global customers to meet the high-end PC, mobile, enterprise level server and data center applications.
According to the DRAM technology development, Samsung EUV will be fully deployed from the fourth generation of 10 nm DRAM (D1A) or highly advanced 14 nm DRAM. It is expected that the mass production of ddr5 and lpddr5 based on D1A will start in 2021, and the DRAM production efficiency will be doubled at that time. ASML also said net bookings in the first quarter of 2020 were strong, reaching 3.1 billion euros, a month on month increase 28.4% , including the 1.5 billion euro EUV system. The demand for EUV remains strong, and part of the demand comes from DRAM.
Although affected by the "epidemic situation", the demand for DRAM and NAND flash in the global consumer market is low, but the demand for DRAM and NAND flash in data centers, enterprises and other fields is increasing. At present, some European countries and regions have begun to resume production, and the demand for memory chips in the follow-up consumer market is expected to continue to increase.
Therefore, in addition to actively promoting the production of DRAM in the new plant, Samsung officially launched the first stage of Xi‘an phase II plant in March 2020, mainly producing the fifth generation of 96 layer 3D v-nand chips to meet the local customer demand in the Chinese market and the growing global demand. In order to further expand production capacity, Samsung is also constructing the second phase of Xi‘an phase II project, which will be completed in the second half of 2021.
In addition, the newly built K1 factory in the north of Iwate County of Japan, which is listed by Kaixia and Western data, has shipped 3D NAND in the first quarter of 2020, and the subsequent production capacity will continue to climb. At the same time, the Fab 7 plant will be built by the end of 2020 in the four day city plant by the Jiaxia and Western data, which will be used for the production of the latest 3D NAND. It is planned to be put into production in 2022.
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